XU Wen-guo, LU Gao-yu, LU Shi-xiang, GAO Feng-xin. Structures and Electron Affinities of Some Alkylthio Radicals and Their AnionsJ. Transactions of Beijing institute of Technology, 2010, (3): 340-347.
Citation: XU Wen-guo, LU Gao-yu, LU Shi-xiang, GAO Feng-xin. Structures and Electron Affinities of Some Alkylthio Radicals and Their AnionsJ. Transactions of Beijing institute of Technology, 2010, (3): 340-347.

Structures and Electron Affinities of Some Alkylthio Radicals and Their Anions

  • Seven different density functional theory methods have been employed to predict the molecular structures and adiabatic electronic affinities of RS/RS-(R=CH3, C2H5, n-C3H7, n-C4H9, n-C5H11, i-C3H7, t-C4H9) radicals and their anions. The basis used is of double-ζ plus polarization quality with additional s-and p-type diffuse functions, labeled as DZP+ +. The most reliable adiabatic electron affinities, obtained by B3LYP methods,are 1.838eV (CH3S), 1.925eV(C2H5S), 1.939eV(n-C3H7S), 1.961eV(n-C4H9S), 1.969eV(n-C5H11S), 2.023eV(i-C3H7S), and 2.055eV(t-C4H9S), respectively. Compared with the experimental values, the average absolute error of the B3LYP method remained only 0.047eV.
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