Effect of SiO₂ and TiO₂ Buffer Layers to the Bending Properties of Flexible ITO Film

Discusses the failure and factors of dependence of the conductivity of flexible ITO films under bending behaviors, as well as the effects of inorganic buffer layers, as SiO₂ and TiO₂, on the bending properties. The results and analysis show that the mismatch parameters, the adhesion and the defects are three main factors affecting the bending properties. The SiO₂ or TiO₂ buffer layer can decrease the critical radius of ITO thin films in inward-bending; and the TiO₂ buffer layer can improve the times of bending of ITO thin films.