YANG Ju-cai, XU Wen-guo, XIAO Wen-sheng. Structure and Electron Affinity of Silicon Sin/Sin-(n=710)J. Transactions of Beijing institute of Technology, 2005, (10): 922-925.
Citation: YANG Ju-cai, XU Wen-guo, XIAO Wen-sheng. Structure and Electron Affinity of Silicon Sin/Sin-(n=710)J. Transactions of Beijing institute of Technology, 2005, (10): 922-925.

Structure and Electron Affinity of Silicon Sin/Sin-(n=710)

  • Four kinds of density functional theory(DFT) methods(B3LYP,BLYP,BP86,and B3P86) are employed to predict the molecular structures and adiabatic electron affinities of Sin/Si-n(n=710) species.The basis set is double-ζ plus polarization quality with additional s-and p-type diffuse functions,labeled as DZP++.The ground states of Si7/Si-7,Si8/Si-8,Si9/Si-9,and Si10/Si-10 are D5h(()1A′()1)/D5h(()2A″()2),C2h(()1Ag)/C(()2A2),Cs(()1A′)/Cs(()2A′),and C(()1A1)/C(()2A1) respectively.Compared with the experimental values,the BLYP method is the best for electron affinities.The electron affinities corrected by zero-point vibrational energies for Si7,Si8, Si9,and Si10 are 1.90,2.59,2.07,and 2.20 eV,respectively.
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