Zou Jian,Xing Xiusan Department of Applied Physics,Beijing Institute of Technology,Beijing 100081. Stochastic Model of Dielectric BreakdownJ. Transactions of Beijing institute of Technology, 1997, (2): 160-165.
Citation:
Zou Jian,Xing Xiusan Department of Applied Physics,Beijing Institute of Technology,Beijing 100081. Stochastic Model of Dielectric BreakdownJ. Transactions of Beijing institute of Technology, 1997, (2): 160-165.
Zou Jian,Xing Xiusan Department of Applied Physics,Beijing Institute of Technology,Beijing 100081. Stochastic Model of Dielectric BreakdownJ. Transactions of Beijing institute of Technology, 1997, (2): 160-165.
Citation:
Zou Jian,Xing Xiusan Department of Applied Physics,Beijing Institute of Technology,Beijing 100081. Stochastic Model of Dielectric BreakdownJ. Transactions of Beijing institute of Technology, 1997, (2): 160-165.
A stochastic dynamic model based on the concept of impact ionizationis presented. The stochastic differential equation of microdefect growth is derivedby using the nonequlibrium statistical method, and by solving the equation theformulae of time-to-failure, and breakdown probability are derived. Thus themicromechanism of dielectric breakdown is connected with macroscopic statisticalnature. The results are consistent with the empirical formula and the experiments.
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