离子辅助反应蒸发技术室温制备ITO薄膜
Preparation of ITO Films Deposited at Room Temperature by Ion Beam-Assisted Reactive Evaporation
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摘要: 室温下利用离子辅助反应蒸发法在玻璃衬底上制备高透射比、低电阻率的ITO透明导电薄膜.实验结果表明离子辅助蒸发可以有效地降低制备温度,提高薄膜的光电特性,薄膜具有明显的(222)择优取向,晶体粒子尺寸约为21 nm;离子源屏压、通氧量及沉积速率是影响薄膜光电特性的主要因素.室温制备的ITO薄膜电阻率为2.4×10-3Ω.cm,可见光平均透射比大于82%.Abstract: ITO films with high transmission and low resistivity have been prepared on glass substrate by ion beam-assisted reactive evaporation at room temperature.Experimental results showed that the deposition temperature can be decreased effectively and the photoelectric properties can be improved.The deposited films are polycrystalline with a preferred orientation of(222) and the size of crystal particle is about 21 nm.Oxygen flux,evaporation rate and ion energy are the chief factors that affect the opto-electric properties of ITO films.Films with a resistivity as low as 2.4×10-3 Ω·cm and the transmittance of above 82% in the visible range have been deposited at room temperature.
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