Abstract: Studies the process of preparation of field emission silicon tip arrays for use in vacuum microelectronic devices. By way of HNA wet chemical etching, field emission silicon tip arrays were prepared and the difference between etching with and without glue made out. The silicon tips were sharpened by means of oxidation sharpening. A 50×60 array of silicon tip was prepared and SEM images of silicon tips were made. Current vs. voltage characteristics of the silicon tip arrays were also observed. Structure of silicon tips prepared with HNA wet chemical etching was in agreement with that from theoretical analysis. Oxidation sharpening did improve the field emission characteristics of silicon tip arrays.